劉耿銘

深度學習 artificial neural network 源極與汲極濃度 Source/Drain doping 導通電阻 半導體元件模擬 Technology Computer Aided Design 品質因數(BFOM) deep learning Aided Design Superjunction Semiconductor device simulation 隨機摻雜波動 FinFET environmental detector 參雜濃度梯度 閘極與汲極負交疊 specific on-resistance 4H-SiC on-resistance Random Dopant Fluctuations 靜態漏電流 低待機功率 TFET source doping gradient UMOSFET Edge Termination Doping Gradient Automatic adjustment standby power 穿隧場效電晶體 gate overlap/underlap Semiconductor simulation Tunneling field-effect transistors JFET region 場環 Source/Drain Extension 鰭式場效電晶體 環境偵測器 自動調整待機功耗 Static leakage current CORDIC 閘極正交疊/負交疊 PN Junction 濃度梯度 Breakdown Voltage 類神經網路 數位座標旋轉器 6H-SiC figure of merit Field Ring figure of merit (BFOM) 源極/汲極延伸 low standby power 源極濃度梯度 半導體模擬 Doping gradient Gate-Drain underlap DMOSFET 崩潰電壓 品質因數 breakdown voltage