半導體元件模擬
Overview
| Works: | 3 works in 3 publications in 3 languages | |
|---|---|---|
Titles
碳化矽功率金氧半場效電晶體之漂移區效應之模擬 = = Simulation of the effects of drift region in silicon carbide power Metal-Oxide-Semiconductor Field-Effect transistors /
by:
(Language materials, printed)
碳化矽邊緣終結結構之摻雜濃度梯度效應之模擬 = = Simulation of doping concentration gradient effect on silicon carbide edge termination structure /
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(Language materials, printed)
1.2 kV 4H : = 碳化矽超接面雙重擴散金氧半場效電晶體設計最佳化之模擬 =Simulation of the design optimization of 1.2 kV 4H-SiC superjunction DMOSFET /
by:
(Language materials, printed)
Subjects